| 摘要 |
<p>PURPOSE: A mask fabrication method of a semiconductor device is provided to prevent the failure of a device by performing a compensating operation according to each pattern density of the semiconductor device. CONSTITUTION: In a device, a first mask is formed an active region or a first region for a gate contact of the semiconductor and it also is formed at an area excluding an area the metal line. A first mask has a dummy active region pattern(304) or a dummy gate contact pattern(306). A dummy contact plug pattern(308) is formed at a region corresponding to the first area and a region excluding the second region for a metal wire. A second mask having the dummy contact plug pattern corresponding to the second region and the first region is formed. The contact plug pattern is formed at a region for the first and second contact plug.</p> |
