| 摘要 |
One embodiment relates to a structure for a solar cell. The structure includes a silicon substrate with P-type and N-type active diffusion regions therein. An oxynitride passivation layer (402) is included at least over the P-type (304) and N-type (302) active diffusion regions. The structure further includes contact openings (502) through the oxynitride passivation layer (402) to the P-type (304) and N-type (302) active diffusion regions, and metal grid lines (702 and 704) which selectively contact the P-type (304) and N-type (302) active diffusion regions by way of the contact openings (502). Another embodiment relates to a method of fabricating a solar cell. Other embodiments, aspects and features are also disclosed.
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