Solid-state imaging device, drive method thereof and electronic apparatus

摘要

A solid-state imaging device includes: plural photodiodes (PD1,PD2,PD3) formed in different depths in a unit pixel area (3020) of a substrate (3021); and plural vertical transistors (Tr1,Tr2,Tr3) formed in the depth direction from one face side of the substrate so that gate portions (3033,3037,3042) for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.