MESA-TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A mesa-type semiconductor device and a manufacturing method thereof are provided to improve humidity resistance by laminating a polyimide film and an insulating layer with a second insulating layer. CONSTITUTION: In a device, an N+ type semiconductor substrate(1) including N type impurity of the high concentration is prepared. The semiconductor layer is grown up on the surface of the semiconductor substrate through an epitaxial method. An N-type semiconductor layer(2) of the low concentration is formed on the semiconductor layer. N type semiconductor layer has a double-layer structure of the N- type and the N+ type. The P-type semiconductor layer(3) is formed by dispersing P-type impurity such as boron on the surface of the N- type semiconductor layer. A PN junction portion(PNJC) is formed at an interface between the P-type semiconductor layer and the N- type semiconductor layer. The total thickness of the N+ type semiconductor substrate, the P-type semiconductor layer, and N- type semiconductor layer is about 200um.