| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to decrease thermal budget by decreasing annealing process time after a passivation process. CONSTITUTION: A first metal line(102) is formed in a substrate(100). An inter-layer dielectric(104) is formed on the first metal line. A contact hole is formed by etching the inter-layer dielectric. A part of the first metal line is revealed by the contact hole. A buffer layer(108) is formed on the inter-layer dielectric along the inner surface of the contact hole. An annealing process is performed. A spacer is formed in the inner wall of the contact hole by etching the buffer layer. A barrier metal layer is formed along the upper plane of the inter-layer dielectric including the spacer. A contact plug is formed on the barrier metal layer to bury the contact hole. A second metal line is formed on the inter-layer dielectric.
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