THREE DIMENSIONAL MEMORY DEVICE USING VERTICAL PILLAR AS ACTIVE REGION AND METHODS OF FABRICATING AND OPERATING THE SAME

摘要

PURPOSE: A three dimensional memory device, a fabrication method and an operation method thereof are provided to control electrical connection state between an active pillar and a source region, by using a bottom selection line. CONSTITUTION: A three dimensional memory device includes plural local word lines arranged in three dimension and plural active pillars(PL) arranged in two dimension. The local word lines constitute plural word line planes(WL_PT) separated electrically. Each word line plane is constituted with local word lines electrically connected on a coplanar plane to have an equipotential level. Intersection points between the word line planes and the active pillars are distributed in three dimensions. Each memory cell(MC) of the memory semiconductor device is formed on the three-dimensional intersection points. An information storage film is arranged between the word line plane and the active pillar.