发明名称 SEMICONDUCTOR DEVICE AND BIAS GENERATING CIRCUIT
摘要 A first power supply voltage input section (VDD) can input a first power supply voltage, a second power supply voltage input section (VDD2) can input a second power supply voltage, a regulator circuit (11) generates a back bias voltage on the basis of the second power supply voltage, and an output section (VBP1) can output the back bias voltage generated by the regulator circuit (11) as an output voltage. A substrate bias can be generated with low power consumption, and the circuit scale can be reduced.
申请公布号 EP2133912(A1) 申请公布日期 2009.12.16
申请号 EP20070740276 申请日期 2007.03.29
申请人 FUJITSU LIMITED 发明人 TANAKA, MOTOYUKI
分类号 G05F3/20;H01L27/02 主分类号 G05F3/20
代理机构 代理人
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