SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce lattice defect due to stress, by reducing stress between a substrate and a semiconductor layer during growth process or cooling process of the semiconductor layer. CONSTITUTION: A buffer layer(200) is formed on the top of a semiconductor substrate(100). A buffer layer(300) is formed on the top of the buffer layer. The buffer layer formed between the substrate and the buffer layer reduces stress between the substrate and a subsequent layer. The buffer layer is formed with a material having a low melting point comparing to growth temperature of the semiconductor layer. The buffer layer in a solid state has a state between liquid phase and solid phase during growth process. The solid-state buffer layer formed on the substrate is changed into sol or gel phase during the growth process. The semiconductor layer is grown on the top of the buffer layer located on the sol-state or gel-state buffer layer.