发明名称 |
METHODS OF DEPOSITING EPITAXIAL THERMOELECTRIC FILMS HAVING REDUCED CRACK AND/OR SURFACE DEFECT DENSITIES AND RELATED DEVICES |
摘要 |
<p>A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.</p> |
申请公布号 |
KR20090129410(A) |
申请公布日期 |
2009.12.16 |
申请号 |
KR20097018183 |
申请日期 |
2008.02.01 |
申请人 |
NEXTREME THERMAL SOLUTIONS, INC. |
发明人 |
PIERCE JONATHAN M.;VAUDO ROBERT P. |
分类号 |
C30B25/18;H01L35/34 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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