SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase reliability by using a flash memory device improving erasing characteristics of dummy cells. CONSTITUTION: A substrate includes a connection region and a memory cell region. Wiring layers are successively stacked on the top of the substrate. Plugs are connected to each wiring layer on the connection region. Global wires are connected to each wiring layer through the plugs. Horizontal distance between sidewalls of the vertically adjacent wiring layers on a region except the connection region is smaller than the width of the plug. Semiconductor pillars are arranged in two dimensions on the memory cell region. The semiconductor pillars pass through the wiring layers. The semiconductor pillar is used as a channel region of a memory cell transistor. At least one of the wiring layers is used as a gate electrode of the memory cell transistors.