发明名称 |
Substrate bias generator arrangement - has dual generators for run=up of power and stable supply states |
摘要 |
A first substrate bias circuit operates with the external supply voltage as its power and applies a first bias level. A second substrate bias circuit operates with the internal reduced supply as its power to apply a second bias level. A stable state registration device determines whether the internal supply is in a stable state or not. A selector chooses the first or second bias circuit in dependence on the registration device output. Pref. the registration device has a supply application register for the external supply. A control signal is produced, dependent on it, to output a signal to the selector. USE/ADVANTAGE - Memory circuit. No problems during switch-on.
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申请公布号 |
DE4039524(A1) |
申请公布日期 |
1991.10.10 |
申请号 |
DE19904039524 |
申请日期 |
1990.12.11 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
ARIMOTO, KAZUTAMI, ITAMI, HYOGO, JP |
分类号 |
G05F3/20;G11C11/408;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;H03F1/30;H03F3/345 |
主分类号 |
G05F3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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