发明名称 System and method for processing an organic memory cell
摘要 A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.
申请公布号 US7632706(B2) 申请公布日期 2009.12.15
申请号 US20050256558 申请日期 2005.10.21
申请人 SPANSION LLC 发明人 YUDANOV NICOLAY F.;SOKOLIK IGOR;KINGSBOROUGH RICHARD P.;LEONARD WILLIAM G.;PANGRLE SUZETTE K.;TRIPSAS NICHOLAS H.;NGO MINH VAN
分类号 H01L51/40 主分类号 H01L51/40
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