发明名称 |
Shielded gate trench (SGT) MOSFET devices and manufacturing processes |
摘要 |
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one of the cells constituting an active cell has a source region disposed next to a trenched gate electrically connecting to a gate pad and surrounding the cell. The trenched gate further has a bottom-shielding electrode filled with a gate material disposed below and insulated from the trenched gate. At least one of the cells constituting a source-contacting cell surrounded by the trench with a portion functioning as a source connecting trench is filled with the gate material for electrically connecting between the bottom-shielding electrode and a source metal disposed directly on top of the source connecting trench. The semiconductor power device further includes an insulation protective layer disposed on top of the semiconductor power device having a plurality of source openings on top of the source region and the source connecting trench provided for electrically connecting to the source metal and at least a gate opening provided for electrically connecting the gate pad to the trenched gate.
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申请公布号 |
US7633119(B2) |
申请公布日期 |
2009.12.15 |
申请号 |
US20060356944 |
申请日期 |
2006.02.17 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD |
发明人 |
BHALLA ANUP;LUI SIK K |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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