发明名称 |
METHOD OF MANUFACTURING COOLING JACKET FOR SILICON INGOT GROWING DEVICE |
摘要 |
PURPOSE: A method of manufacturing a cooling jacket for a silicon ingot growing device is provided to improve productivity by coating a heat absorption layer inside of a growing device when absorbing heat in growing the ingot. CONSTITUTION: A method of manufacturing a cooling jacket for a silicon ingot growing device is comprised of the steps: etching the surface of a cooling jacket(S10); degrease the cooling jacket with a high temperature alkaline(S20); etching the surface of the cooling jacket with hydrochloric acid or sulfuric acid(S30); dipping the cooling jacket in a black color liquid for a certain time and forming a heat absorption layer on the surface on the cooling jacket; maintaining a black color liquid with a certain concentration and a boiling point boiled; and dipping a component into the black color liquid and coating it on the surface(S40).
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申请公布号 |
KR100932403(B1) |
申请公布日期 |
2009.12.15 |
申请号 |
KR20080084477 |
申请日期 |
2008.08.28 |
申请人 |
SEMIMATERIALS. CO., LTD.;PARK, JIN SUB |
发明人 |
PARK, KUN;PARK, JIN SUB |
分类号 |
C30B29/06;C30B15/00 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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