发明名称 METHOD OF MANUFACTURING COOLING JACKET FOR SILICON INGOT GROWING DEVICE
摘要 PURPOSE: A method of manufacturing a cooling jacket for a silicon ingot growing device is provided to improve productivity by coating a heat absorption layer inside of a growing device when absorbing heat in growing the ingot. CONSTITUTION: A method of manufacturing a cooling jacket for a silicon ingot growing device is comprised of the steps: etching the surface of a cooling jacket(S10); degrease the cooling jacket with a high temperature alkaline(S20); etching the surface of the cooling jacket with hydrochloric acid or sulfuric acid(S30); dipping the cooling jacket in a black color liquid for a certain time and forming a heat absorption layer on the surface on the cooling jacket; maintaining a black color liquid with a certain concentration and a boiling point boiled; and dipping a component into the black color liquid and coating it on the surface(S40).
申请公布号 KR100932403(B1) 申请公布日期 2009.12.15
申请号 KR20080084477 申请日期 2008.08.28
申请人 SEMIMATERIALS. CO., LTD.;PARK, JIN SUB 发明人 PARK, KUN;PARK, JIN SUB
分类号 C30B29/06;C30B15/00 主分类号 C30B29/06
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