| 发明名称 |
Semiconductor device having field stabilization film and method |
| 摘要 |
In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer. |
| 申请公布号 |
US7632760(B2) |
申请公布日期 |
2009.12.15 |
| 申请号 |
US20050099895 |
申请日期 |
2005.04.07 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
TU SHANGHUI LARRY;ISHIGURO TAKESHI;KURAMAE FUMIKA;OMI RYUJI |
| 分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
| 代理机构 |
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