发明名称 HETERO-CRYSTALLINE SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME
摘要 A hetero-crystalline semiconductor device 100 and a method 200 of making the same include a non-single crystalline semiconductor layer 110, 140 and a nanostructure layer 120 that comprises a single crystalline semiconductor nanostructure 122, 124 integral to a crystallite 112 of the non-single crystalline semiconductor layer 110. 140.
申请公布号 KR20090128447(A) 申请公布日期 2009.12.15
申请号 KR20097020704 申请日期 2008.02.28
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 KOBAYASHI NOBUHIKO;WANG SHIH YUAN
分类号 B82B1/00;B82B3/00;H01L21/20 主分类号 B82B1/00
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