发明名称 REPARATURVERFAHREN VON KRISTALLINEN STRUKTUREN DURCH EPITAXIE
摘要 A repair method of propagating epitaxial crystalline structures is provided. The repair method broadly comprises the steps of providing a substrate to be repaired, placing an additive material as a preformed shape onto an area of the substrate to be repaired, utilizing a heat source to heat an entire volume of the additive material and an area adjacent to the additive material to a fusion temperature, holding at the fusion temperature for a time sufficient to allow grain growth and orientation to occur, and ramping down the heat source at a predetermined controlled rate until solidification is complete.
申请公布号 AT449874(T) 申请公布日期 2009.12.15
申请号 AT20060256349T 申请日期 2006.12.13
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 SHUBERT, GARY CHARLES
分类号 C30B11/00;B23P6/00 主分类号 C30B11/00
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