| 摘要 |
<p>A thin-film transistor in which a gate electrode (3), a gate insulating film (4), a channel layer (5), and source/drain layers (7, 8) are stacked in this order or in the reverse order from this on a substrate (2) is characterized in that impurities are contained in the source/drain layers (7, 8) while the impurities have a concentration gradient that becomes lower concentration toward the channel layer (5). The thin-film transistor capable of increasing an on/off ratio, its manufacturing method, and display are provided.</p> |
