发明名称 |
Phase change random access memory device |
摘要 |
A phase-change random access memory device includes a global bit line connected to a write circuit and a read circuit; a plurality of local bit lines, each of which being connected to a plurality of phase-change memory cells; and a plurality of column select transistors selectively connecting the global bit line with each of the plurality of local bit lines. Each column select transistor has a resistance that depends on distance from the write circuit and the read circuit.
|
申请公布号 |
US7633100(B2) |
申请公布日期 |
2009.12.15 |
申请号 |
US20050317292 |
申请日期 |
2005.12.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO WOO-YEONG;SEO JONG-SOO;KIM IK-CHUL;MOON YOUNG-KUG |
分类号 |
H01L29/80 |
主分类号 |
H01L29/80 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|