| 摘要 |
PURPOSE: A manufacturing method of semiconductor device is provided to minimize warping of a wafer by canceling stresses applied to a passivation layer, thereby improving reliability and efficiency of the semiconductor device. CONSTITUTION: A wafer(202) in which an integrated circuit is formed is prepared. A passivation layer is formed on the wafer in order to protect the integrated circuit. A foaming agent is added to the passivation layer in order to reduce stresses caused by volume contraction of the passivation layer. Insulating material without the volume contraction is more added to the passivation layer at a temperature of 300~400°C. In a front side of the wafer, a first passivation layer(204) is formed. In a rear side of the water, a second passivation layer(206) is formed.
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