| 摘要 |
PURPOSE: A contact hole manufacturing method of semiconductor device is provided to suppress generation of a defect by reducing an aspect ratio in a process of forming a contact hole. CONSTITUTION: A first insulating layer(110) is formed on a semiconductor substrate(102). An etch stopping layer(112) in which a junction area top is opened is formed on the first insulating layer. A second insulating layer is formed on the first insulating layer and the etch stopping layer. A hard mask pattern in which an upper part of an area where a metal line will be formed is opened is formed on the second insulating layer. The second insulating layer is etched until the etch stopping layer is exposed through a first etching process using the hard mask pattern. The first insulating layer of a lower part of an area where the etch stopping layer is opened is etched together with the second insulating layer and forms a recess. A contact mask pattern is formed so as for the recess to be opened. By etching a recess lower part through a second etching process using the contact mask pattern, a contact hole is formed. On the semiconductor substrate, a buffer layer(106) and a first etch stopping layer(108) are formed.
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