| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC semiconductor device which has L-load surge resistance and also has breaking electric field intensity, and to provide a method of manufacturing the same. SOLUTION: A trench 5 for forming a deep p-type layer 6 is different in width between a center region R1a and a connection region R1b. Specifically, a trench 5a in the center region R1a is made larger in width than a trench 5b in the connection region R1b. When a first layer 6a with low concentration and a second layer 6b with high concentration are formed in order, the first layer 6a is thick on the side of the trench 5b where the layer 6b is narrow in width and thin on the side of the trench 5a where the first layer 6a is wide in width. Consequently, the SiC semiconductor device has a structure wherein the second layer 6b with the high concentration of the deep p-type layer 6 is deeper in the center region R1a than in the connection region R1b. Consequently, the center region R1a which is not in contact with a voltage withstanding structure region R2 is lowest in breakdown voltage BV (R1a) compared with other regions, and the semiconductor device is broken down here. COPYRIGHT: (C)2010,JPO&INPIT |
