发明名称 |
METHOD OF MANUFACTURING BAW RESONANCE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a BAW resonance device can improve a mechanical quality factor of a resonator. <P>SOLUTION: A recess 1b is formed by etching a scheduled region of etching start of a cavity 1a on one surface of a support substrate 1 comprising an MgO substrate (Fig.1(d)). A lower electrode 31 and a piezoelectric layer 32 made of a lead-based piezoelectric material (for example, PZT) are formed at the one surface side of the support substrate 1 (Fig.1(l)). An insulating layer 4 is formed (Fig.1(p)). An upper electrode is formed, and then an etching hole 41 is formed in the insulating layer 4 surrounding the resonator (Fig.1(v)). An etching liquid is introduced through the etching hole 41 of the insulating layer 4 and the recess 1b to etch the support substrate 1, thus forming the cavity 1a (Fig.1(w)). <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009290368(A) |
申请公布日期 |
2009.12.10 |
申请号 |
JP20080138627 |
申请日期 |
2008.05.27 |
申请人 |
PANASONIC ELECTRIC WORKS CO LTD |
发明人 |
YOSHIHARA TAKAAKI;HAYAZAKI YOSHIKI;YAMAUCHI NORIHIRO;SHIRAI TAKEO;MATSUSHIMA CHOMEI |
分类号 |
H03H3/02;H01L41/09;H01L41/18;H01L41/22;H01L41/39;H03H9/17 |
主分类号 |
H03H3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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