| 摘要 |
PROBLEM TO BE SOLVED: To suppress dark current due to leak phenomena and secure reliability of elements in a CMOS-type solid-state imaging device. SOLUTION: When pixels using electrons as signal charge are to be driven, the negative voltage level of a control signal for subjecting transistors of the pixels to pulse driving is adjusted to a voltage which is increased as the charge accumulating time is increased. Preferably, the negative voltage level is the ground GND when signal charge accumulation is not carried out. The negative voltage level is increased only when the charge accumulating time is long, i.e., the dark current caused by the leak phenomena is problematic. Accordingly, even when the dark current is suppressed, the stress applied to the pixels and a gate oxide film of the drive circuit thereof and the characteristic degradation of the transistors can be suppressed. COPYRIGHT: (C)2010,JPO&INPIT |
