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发明名称
Method and apparatus for thin film memory
摘要
A multi-layer thin-film device includes thin film memory and thin film logic. The thin film memory may be programmable resistance memory, such as phase change memory, for example. The thin film logic may be complementary logic.
申请公布号
US2009303781(A1)
申请公布日期
2009.12.10
申请号
US20080156996
申请日期
2008.06.06
申请人
OVONYX, INC.
发明人
LOWREY TYLER
分类号
G11C11/00;H01L45/00
主分类号
G11C11/00
代理机构
代理人
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