| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of avoiding the occurrence of an undesirable hump phenomenon by a response of drain current Id by gate voltage Vg by a parasitic transistor to be generated in an edge portion of an active region adjacent to an interface between an isolation region and the active region. <P>SOLUTION: The semiconductor device includes the active region that is defined by the isolation region which is an insulating region on a substrate, and adjacent to an interface of the isolation region and a center portion that is surrounded by the edge portion, a gate electrode that includes a center gate portion formed on the active region and the isolation region, and overlapping the center portion of the active region, an edge gate portion overlapping the edge portion of the active region, and a first impurity doping region of a first conductivity type, and a gate insulating layer disposed between the active region and the gate electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT |
