| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, and a method for manufacturing the same. SOLUTION: A first laminate LB1 comprises first interlayer insulating films ID1a-ID1d having first mechanical strength. A second laminate LB2 comprises second interlayer insulating films ID2a and ID2b having the mechanical strength larger than the first mechanical strength. A first region Ra1 comprises a first metal layer L1 and via V1 provided in the first laminate LB1. A second region Ra2 comprises a second metal layer L2 and via V2 provided in the second laminate LB2. The second region Ra2 overlaps with at least a part of the first region Ra1 when seen in plane view, is not coupled with the first region Ra1 by vias, and sandwiches the second interlayer insulating film ID2a between it and the first region Ra1. COPYRIGHT: (C)2010,JPO&INPIT |
