| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing technique of a semiconductor integrated circuit apparatus utilizing a defect modification technique of a reflection-type mask which uses an extreme ultra violet light (EUV) with a wavelength near 13.5 nm as an exposure light source. <P>SOLUTION: This manufacturing technique forms an auxiliary pattern 301 having a more detailed aperture diameter than an aperture pattern 204 on an absorption layer 203 adjacent to the aperture pattern 204 where a phase failure 211 occurs. This auxiliary pattern 301 is a pattern for adjusting an exposure amount when transferring the aperture pattern 204 to a photoresist film on a wafer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
