发明名称 Schaltungsanordnung zum Schutz gegen transiente Spannungen und Spannungsverpolung
摘要 <p>Protection circuits (1) to be located between power supplies (2) and further circuitries (20,30) for protecting further circuitries (20,30) against voltage irregularities and comprising main transistors (7) coupled to switching circuits (10) for rendering main transistors (7) operative/non-operative can be made more allround by providing them with comparators (11) for controlling gate voltages of main transistors (7) via switches (12,13) to get protection against small negative voltage pulses and voltage fluctuations. Said switches (12,13) comprise two switches (12,13) for interrupting a reference voltage generated by a reference voltage source and for supplying a nearby ground voltage to said gate. A diode (14) between switch (13) and gate allows negative voltages at said gate for simplifying the introduction of further stages. Thick oxide transistors (15) protect further circuitries (20,30) and main transistors (7) against large negative voltage pulses. Capacitors (16) and resistors (17) coupled parallelly to thick oxide transistors (15) protect against large negative voltage pulses and reverse polarity. Serial transistors (21) are coupled anti-serially to main transistors (7) to get protection against large positive voltage pulses. <IMAGE></p>
申请公布号 DE60234158(D1) 申请公布日期 2009.12.10
申请号 DE2002634158 申请日期 2002.04.22
申请人 AMI SEMICONDUCTOR BELGIUM BVBA 发明人 BROULIM, LUDEK;VANROEYEN, STEFAN
分类号 H02H11/00 主分类号 H02H11/00
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