| 摘要 |
PROBLEM TO BE SOLVED: To provide a dual workfunction semiconductor device with a simplified integration mechanism and a method for fabricating the same. SOLUTION: The dual workfunction semiconductor device comprises a first transistor comprising a first gate stack 111 having a first effective workfunction, and a second transistor comprising a second gate stack 112 having a second effective workfunction being different from the first effective workfunction. The first gate stack 111 comprises a first gate dielectric capping layer 104, a gate dielectric host layer 105, a first metal gate electrode layer 106, a barrier metal gate electrode layer 107, a second gate dielectric capping layer 108, and a second metal gate electrode layer 109. The second gate stack 112 comprises a gate dielectric host layer 105, a first metal gate electrode layer 106, a second gate dielectric capping layer 108, and a second metal gate electrode 109. The second metal gate electrode layer 109 consists of the same metal composition as the first metal gate electrode layer 106. COPYRIGHT: (C)2010,JPO&INPIT |
