| 摘要 |
A semiconductor device is made by providing a substrate having an interconnect structure, providing a plurality of semiconductor die each having a through silicon via (TSV), mounting the semiconductor die to the substrate to electrically connect the TSV to the interconnect structure, depositing an encapsulant between the semiconductor die, and forming a shielding layer over the encapsulant and semiconductor die. The shielding layer is electrically connected to the TSV which in turn electrically connects to the interconnect structure to isolate the semiconductor die from interference. The shielding layer is electrically connected to a ground potential through the TSV and interconnect structure. The semiconductor die includes solder bumps which are electrically connected to contact pads on the substrate. The substrate also includes solder bumps electrically connected to a conductive channel in the interconnect structure which is electrically connected to the TSV. The substrate is singulated to separate the semiconductor die.
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