| 摘要 |
A method of manufacturing a semiconductor device includes forming trenches (22), and then selectively etching a buried layer (14) to form a cavity. An insulator is then deposited on the sidewalls of the trenches (22), not covering the cavity, and the cavity is then used to form a conductive region (28) in the cavity. The trench (22) can then be filled with insulator (40), in which case the conductive region (28) may form a precisely located doped region, or with conductor to form a contact to the conductive region (28).
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