发明名称 |
Silicon Film Deposition Method Utilizing a Silent Electric Discharge and an Active Species |
摘要 |
A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition. Optionally, an activated hydrogen-containing composition is introduced into the deposition chamber during film deposition. The activated hydrogen-containing composition is formed by exposing hydrogen gas to microwave radiation.
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申请公布号 |
US2009301551(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20090466141 |
申请日期 |
2009.05.14 |
申请人 |
ENERGY PHOTOVOLTAICS, INC. |
发明人 |
AKHTAR MASUD;DELAHOY ALAN E. |
分类号 |
H01L31/04;B05D3/14;B32B9/04 |
主分类号 |
H01L31/04 |
代理机构 |
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