发明名称 METHOD OF SEATING SILICON CHIP ONTO HOUSING BASE
摘要 FIELD: physics; electronics. ^ SUBSTANCE: invention relates to microelectronics and can be used in making semiconductor devices and integrated circuits. The method of seating a silicon chip onto the base of a housing for a semiconductor device involves successive deposition of metal layers onto the seating surface of the chip and soldering the chip to the base of the housing. Two metals - titanium and germanium are deposited on the seating surface of the chip. The process is carried out in a single fabrication cycle, and the chip is soldered to the base of the housing at temperature ranging from 300 to 320C. ^ EFFECT: more reliable contact between the chip and the base of the housing and stability of the soldering process. ^ 2 ex
申请公布号 RU2375787(C2) 申请公布日期 2009.12.10
申请号 RU20050141101 申请日期 2005.12.27
申请人 DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET (DGTU) 发明人 ISMAILOV TAGIR ABDURASHIDOVICH;SHAKHMAEVA AJSHAT RASULOVNA;SHANGEREEVA BIJKE ALIEVNA
分类号 H01L21/58 主分类号 H01L21/58
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