BAW RESONANCE DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a BAW resonance device enabling ruggedization without increasing parasitic capacity, and to provide a manufacturing method of the BAW resonance device.

SOLUTION: In the BAW resonance device, respective peripheries of respective etching holes 5, 5 in an insulating layer 4 are reinforced, and reinforcement sections 6, 6 made of a metal material electrically insulated from a resonator 3 are formed by twos. The reinforcement sections 6 are formed on both the surfaces in a thickness direction of the insulating layer 4 to respective etching holes 5; the reinforcement sections 6 formed at the side of a support substrate 1 in the insulating layer 4 is formed to the same thickness as that of a lower electrode 31 by the same metal material as that of the lower electrode 31; and the reinforcement section 6 formed at a side opposite to the side of the support substrate 1 in the insulating layer 4 is formed to the same thickness as that of an upper electrode 33 by the same metal material as that of the upper electrode 33.

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