| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve emission efficiency of a nitride semiconductor light-emitting diode containing an active layer having an MQW structure. <P>SOLUTION: The nitride semiconductor light-emitting diode includes at least: an n-type nitride semiconductor layer (14); a nitride semiconductor active layer (13); a p-type nitride semiconductor layer (12) and a reflective metal layer (21) in this lamination order. The active layer has a multiple quantum well structure where two or more barrier layers (13b) and two or more well layers (13a) are alternately laminated. A specific well layer (13a<SB>2</SB>) has smaller energy band gap compared with the other well layers, and an interval between the specific well layer (13a<SB>2</SB>) and the reactive metal layer (21) is 140 nm or less. <P>COPYRIGHT: (C)2010,JPO&INPIT |
