| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a sealing film provided around a columnar electrode, and in which transverse rupture strength is made higher even when a silicon substrate is reduced in thickness. <P>SOLUTION: The sealing film 11 provided around the columnar electrode 10 is formed of a material obtained by impregnating a base made of glass fiber, glass cloth, aramid fiber, aramid cloth, etc., or a composite base thereof with a thermosetting resin composed of an epoxy resin etc. Consequently, the transverse rupture strength is made higher even when the silicon substrate 1 is reduced in thickness as compared with a case wherein the sealing film 11 is formed of a material prepared by mixing silica particles with an epoxy resin. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
