摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve adhesiveness of a plated resist film for columnar electrode formation, in a semiconductor device having a columnar electrode. <P>SOLUTION: The plated resist film 25 for columnar electrode formation is formed by laminating a dry film resist on upper surfaces of an upper metal layer 9 and a base metal layer 8 by a thermocompression method using a laminate roller. Next, the plated resist film 25 for columnar electrode formation is uniformly pressed from its upper side by pressure of compressed air in a chamber. Then, the adhesiveness of the plated resist film 25 for columnar electrode formation to the peripheral parts of connection pads 9b of the upper metal layer 9 can be improved by uniformly pressing the plated resist film 25 for columnar electrode formation from its upper side by the compressed air even if the adhesiveness of the plated resist film 25 for columnar electrode formation to the peripheral parts of the connection pads 9b of the upper metal layer 9 is degraded only by a thermocompression method using a laminate roller. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |