| 摘要 |
PROBLEM TO BE SOLVED: To use a high heat-resistant tentative substrate firstly at manufacturing, to use a low heat-resistant film substrate lastly, and to separate the tentative substrate, thus reducing the number of steps for separating the tentative substrate in a thin-film transistor panel (thin-film element) obtained in this way. SOLUTION: A separating layer 32 composed of a zinc oxide, a base insulating film 3, a thin-film transistor (thin-film element entity) 12, and an overcoat film 17 are formed on a temporary substrate 31. Next, a film substrate 1 is adhered to the upper surface of the overcoat film 17 with an adhesion layer 2 between. Then, if the separating layer 32 composed of the zinc oxide is eliminated by wet etching, the tentative substrate 31 is automatically separated from the base insulating film 3. This can reduce the number of steps for separating the tentative substrate 31. COPYRIGHT: (C)2010,JPO&INPIT |
