| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device that not only achieves excellent yield but also prevents characteristics deterioration, a method for manufacturing same and a method for manufacturing a semiconductor laser device. Ž<P>SOLUTION: The semiconductor laser device includes a n-type substrate 6, a n-type clad layer 7 formed on the n-type substrate 6, an active layer 9 formed on the n-type clad layer 7, a n-type current block layer 11 which is formed above the active layer 9 and includes an aperture portion extended to an upper surface of the active layer 9, and a p-type clad layer 12 for embedding the aperture portion, formed on the n-type current block layer 11. A cleavage guide groove 3 which penetrates with the p-type clad layer 12 and whose bottom surface is disposed at a position higher than an upper surface of the active layer 9 is formed in an end surface region which is disposed by sandwiching the aperture portion in plan view and which includes an end surface of a resonator of the semiconductor laser element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
