发明名称 |
Independent Bi-Directional Margin Control Per Level and Independently Expandable Reference Cell Levels for Voltage Mode Sensing |
摘要 |
A memory system includes reference level generators that may provide programmable margins, and programmable verify voltage levels. The reference levels may be shifted within a range of voltages with varying differences between reference voltage levels and with different margins and verify levels.
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申请公布号 |
US2009303803(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20090543424 |
申请日期 |
2009.08.18 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
SARIN VISHAL;TRAN HIEU VAN;SAIKI WILLIAM JOHN |
分类号 |
G11C5/14;G11C7/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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