| 发明名称 |
Forming sublithographic phase change memory heaters |
| 摘要 |
A phase change memory may be formed with a sublithographic heater by using a mask with a sidewall spacer to etch an opening in a dielectric layer. The opening then has a sublithographic lateral extent. The resulting via may be filled with a heater material to form a sublithographic heater.
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| 申请公布号 |
US2009302298(A1) |
申请公布日期 |
2009.12.10 |
| 申请号 |
US20080156851 |
申请日期 |
2008.06.05 |
| 申请人 |
LEE JONG-WON S;SPADINI GIANPAOLO |
发明人 |
LEE JONG-WON S.;SPADINI GIANPAOLO |
| 分类号 |
H01L45/00;H01L21/311 |
主分类号 |
H01L45/00 |
| 代理机构 |
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