发明名称 |
ORGANIC TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>An organic transistor comprises a source electrode and a drain electrode disposed apart from each other, an organic semiconductor layer interposed between the source and drain electrodes, and a gate electrode which is disposed facing the organic semiconductor layer between the source and drain electrodes via a gate insulating film and defines a channel portion of the organic semiconductor layer. The source electrodes comprises at least two electrode layers laminated together, and the electrode layers include a contact layer which is in contact with the organic semiconductor layer and a non-contact layer which is not in contact with the organic semiconductor layer.</p> |
申请公布号 |
WO2009147746(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
WO2008JP60456 |
申请日期 |
2008.06.06 |
申请人 |
CHUMAN, TAKASHI;PIONEER CORPORATION |
发明人 |
CHUMAN, TAKASHI |
分类号 |
H01L21/336;H01L29/786;H01L51/05 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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