发明名称 ORGANIC TRANSISTOR AND MANUFACTURING METHOD THEREOF
摘要 <p>An organic transistor comprises a source electrode and a drain electrode disposed apart from each other, an organic semiconductor layer interposed between the source and drain electrodes, and a gate electrode which is disposed facing the organic semiconductor layer between the source and drain electrodes via a gate insulating film and defines a channel portion of the organic semiconductor layer. The source electrodes comprises at least two electrode layers laminated together, and the electrode layers include a contact layer which is in contact with the organic semiconductor layer and a non-contact layer which is not in contact with the organic semiconductor layer.</p>
申请公布号 WO2009147746(A1) 申请公布日期 2009.12.10
申请号 WO2008JP60456 申请日期 2008.06.06
申请人 CHUMAN, TAKASHI;PIONEER CORPORATION 发明人 CHUMAN, TAKASHI
分类号 H01L21/336;H01L29/786;H01L51/05 主分类号 H01L21/336
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