Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate.
申请公布号
WO2009117494(A3)
申请公布日期
2009.12.10
申请号
WO2009US37525
申请日期
2009.03.18
申请人
APPLIED MATERIALS, INC.;KASHEFIZADEH, KEYVAN;XIE, ZHIGANG;BODKE, ASHISH, S.;CHANG, MEI
发明人
KASHEFIZADEH, KEYVAN;XIE, ZHIGANG;BODKE, ASHISH, S.;CHANG, MEI