发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To reduce the mounting height of a semiconductor device. <P>SOLUTION: A wiring substrate 2 includes an upper surface 2a having multiple bonding leads 2c, formed therein and a lower surface 2c having multiple lands 2d formed therein. The wiring substrate 2 is a multilayer wiring substrate, in which multiple wiring layers 2g and multiple insulating layers 2h are formed alternately on the upper surface side 2fa and on the lower surface side 2fb, respectively of a core material 2f of the wiring substrate 2. The bonding leads 2c are formed of part of an uppermost wiring layer 2g1, and the lands 2d are formed of part of a lowermost wiring layer 2g6. The insulating layers 2h include second insulating layers 2hp containing a fiber and a resin and third insulating layers 2ha with a lower fiber content than the second insulating layers 2hp. The second insulating layers 2hp are formed on the upper-surface side 2fa and on the lower surface side 2fb respectively of the core material 2f. The third insulating layers 2ha are formed on the upper-surface side 2fa and on the lower-surface side 2fb respectively of the core material 2f, with the second insulating layers 2hp interposed therebetween. The uppermost wiring layer 2g1 and the lowermost wiring layer 2g6 are formed on the third insulating layers 2ha. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009289908(A) 申请公布日期 2009.12.10
申请号 JP20080139680 申请日期 2008.05.28
申请人 RENESAS TECHNOLOGY CORP 发明人 OKADA MIKAKO;ISHIKAWA TOMOKAZU
分类号 H01L23/12 主分类号 H01L23/12
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