| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of dividing a wafer, in which the wafer with a film covered on the surface of street is divided without leaving the film. <P>SOLUTION: The method of dividing the wafer in which the wafer wherein a device is formed in a plurality of regions sectioned by a plurality of streets formed in a lattice shape on a surface of a substrate and the film is coverd on the surfaces of the streets is divided along the streets into the devices includes: a film dividing step of irradiating the wafer with a laser light beam having a wavelength of absorption by the film from the surface side of the wafer along the streets and thus forming laser processing grooves to part the wafer along the streets; an altered layer forming step of positioning a focusing point of a laser light beam having a wavelength of transmission in the substrate inside the substrate from the backside of the wafer and irradiating the substrate along the streets to form altered layers in the substrate along the streets; a backside grinding step of grinding the backside of the substrate constituting the wafer to form the wafer to a predetermined thickness; and a wafer breaking step of applying external force to the wafer to break the wafer along the streets. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
