MAGNETORESISTIVE DEVICE OF CPP TYPE, AND MAGNETIC DISK SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a magnetoresistive device in which a relative angle of magnetizing directions of two ferromagnetic layers can be set at 90° even though a fluctuation arises in the strength of impression of a bias magnetic field, and the reliability of an operation is excellent with no fluctuation in an MR ratio. Ž

SOLUTION: The magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit 8, and first and second shield layers 3 and 5 which are located and formed such that the magnetoresistive unit 8 is sandwiched vertically between them. The magnetoresistive unit 8 includes a nonmagnetic intermediate layer, and a first ferromagnetic layer 130 and a second ferromagnetic layer 150 stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. In the first shield layer 3 and the second shield layer 5, an antiparallel magnetization state is created. The first and second ferromagnetic layers 130 and 150 are exchange coupled to the first and second shield layers 3 and 5, by way of first and second exchange coupling function gap layers, with an exchange coupled strength of 0.2 to 2.5 erg/cm2, including a CoFe alloy layer provided with a physical property of positive magnetostriction in which magnetostriction λ is within the range of 20×10-6to 40×10-6. Ž

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