| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose characteristic is improved and a method of manufacturing the same. SOLUTION: In the method of manufacturing the semiconductor device, a gate electrode 2 is formed above an insulating substrate 1, and a gate insulating film 3 is formed above the gate electrode 2. An amorphous semiconductor film 14 is formed above the gate insulating film 3, laser annealing is performed on the amorphous semiconductor film 14 and the amorphous semiconductor film 14 is changed to a microcrystalline semiconductor film 4. After that, hydrofluoric acid processing is performed on the microcrystalline semiconductor film 4. The amorphous semiconductor film 14 is formed above the microcrystalline semiconductor film 4 where the hydrofluoric acid processing is performed so that the pattern ends are arranged outside pattern ends of the microcrystalline semiconductor film 4 and the amorphous semiconductor film contacts with the gate insulating film 3 near the pattern ends. COPYRIGHT: (C)2010,JPO&INPIT
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