发明名称 |
Methods of manufacturing oxide semiconductor thin film transistor |
摘要 |
Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.
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申请公布号 |
US2009305468(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20090320627 |
申请日期 |
2009.01.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG JISIM;PARK YOUNGSOO;LEE SANGYOON;KIM CHANGJUNG;KIM TAESANG;KWON JANGYEON;SON KYUNGSEOK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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