| 发明名称 |
METHOD OF REDUCING MEMORY EFFECTS IN SEMICONDUCTOR EPITAXY |
| 摘要 |
<p>A method of reducing memory effects during an epitaxial growth process is provided in which a gas mixture comprising hydrogen gas and a halogen- containing gas is used to flush the CVD reaction chamber between growth steps.</p> |
| 申请公布号 |
WO2009148930(A1) |
申请公布日期 |
2009.12.10 |
| 申请号 |
WO2009US45551 |
申请日期 |
2009.05.29 |
| 申请人 |
DOW CORNING CORPORATION;LOBODA, MARK |
发明人 |
LOBODA, MARK |
| 分类号 |
C23C16/44;H01L21/205 |
主分类号 |
C23C16/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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